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1. product profile 1.1 general description a 650 w ldmos rf power transistor for broadca st transmitter applications and industrial applications. the excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. [1] measured [dbc] with delta marker at 4.3 mhz from center frequency. [2] par (of output signal) at 0.01 % probability on ccdf; pa r of input signal = 9.5 db at 0.01 % probability on ccdf. 1.2 features and benefits ? excellent ruggedness ? optimum thermal behavi or and reliability, r th(j-c) = 0.15 k/w ? high power gain ? high efficiency ? designed for broadband operation (470 mhz to 860 mhz) ? internal input matching for high gain and optimum broadband operation ? excellent reliability ? easy power control ? compliant to restriction of hazardous substances (rohs) directive 2002/95/ec 1.3 applications ? communication transmitter applications in the uhf band ? industrial applicatio ns in the uhf band BLF888B; BLF888Bs uhf power ldmos transistor rev. 1 ? 17 october 2011 product data sheet table 1. application information rf performance at v ds = 50 v unless otherwise specified. mode of operation f p l(av) p l(m) g p ? d imd3 imd shldr par (mhz) (w) (w) (db) (%) (dbc) (dbc) (db) rf performance in a common source 860 mhz narrowband test circuit 2-tone, class-ab f 1 = 860; f 2 = 860.1 250 - 21 46 ? 34 - - dvb-t (8k ofdm) 858 120 - 21 33 - ? 31 [1] 8.2 [2] rf performance in a common source 470 mhz to 860 mhz broadband test circuit dvb-t (8k ofdm) 858 120 - 20 32 - ? 32 [1] 8.0 [2]
BLF888B_BLF888Bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 17 october 2011 2 of 17 nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values table 2. pinning pin description simplified outline graphic symbol BLF888B (sot539a) 1drain1 2drain2 3gate1 4gate2 5source [1] BLF888Bs (sot539b) 1drain1 2drain2 3gate1 4gate2 5source [1] 5 12 43 4 3 5 1 2 sym117 5 12 43 4 3 5 1 2 sym117 table 3. ordering information type number package name description version BLF888B - flanged balanced ldmost ceramic package; 2 mounting holes; 4 leads sot539a BLF888Bs - earless flanged balanced ldmost ceramic package; 4 leads sot539b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 104 v v gs gate-source voltage ? 0.5 +11 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c
BLF888B_BLF888Bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 17 october 2011 3 of 17 nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor 5. thermal characteristics [1] r th(j-c) is measured under rf conditions. 6. characteristics [1] i d is the drain current. [2] capacitance values without internal matching. table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l(av) = 125 w [1] 0.15 k/w table 6. dc characteristics t j =25 ? c; per section unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d = 2.4 ma [1] 104 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 240 ma [1] 1.4 1.9 2.4 v i dss drain leakage current v gs =0v; v ds =50v - - 2.8 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v -38- a i gss gate leakage current v gs =10v; v ds = 0 v - - 280 na r ds(on) drain-source on-state resistance v gs =v gs(th) +3.75 v; i d =8.5a [1] - 120 - m ? c iss input capacitance v gs = 0 v; v ds =50v; f=1mhz [2] - 210 - pf c oss output capacitance v gs = 0 v; v ds =50v; f=1mhz -67- pf c rss reverse transfer capacitance v gs = 0 v; v ds =50v; f=1mhz -1.35- pf table 7. rf characteristics rf characteristics in nxp production narrowband test circuit; t case =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit 2-tone, class-ab v ds drain-source voltage - 50 - v i dq quiescent drain current [1] -1.3- a p l(av) average output power f 1 = 860 mhz; f 2 =860.1mhz 250 - - w g p power gain f 1 = 860 mhz; f 2 =860.1mhz 20 21 - db ? d drain efficiency f 1 = 860 mhz; f 2 =860.1mhz 42 46 - % imd3 third-order intermodulation distortion f 1 = 860 mhz; f 2 =860.1mhz - ? 34 ? 30 dbc
BLF888B_BLF888Bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 17 october 2011 4 of 17 nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor [1] i dq for total device [2] measured [dbc] with delta marker at 4.3 mhz from center frequency. [3] par (of output signal) at 0.01 % probability on ccdf; par of input signal = 9.5 db at 0.01 % probability on ccdf. dvb-t (8k ofdm), class-ab v ds drain-source voltage - 50 - v i dq quiescent drain current [1] -1.3- a p l(av) average output power f = 858 mhz 120 - - w g p power gain f = 858 mhz 20 21 - db ? d drain efficiency f = 858 mhz 30 33 - % imd shldr intermodulation distortion shoulder f = 858 mhz [2] - ? 31 ? 27 dbc par peak-to-average ratio f = 858 mhz [3] -8.2- db v gs = 0 v; f = 1 mhz. fig 1. output capacitance as a function of drain-source voltage; typical values per section table 7. rf characteristics ?continued rf characteristics in nxp production narrowband test circuit; t case =25 ? c unless otherwise specified. symbol parameter conditions min typ max unit 001aao006 v ds (v) 060 40 20 200 100 300 400 c oss (pf) 0
BLF888B_BLF888Bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 17 october 2011 5 of 17 nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor 7. application information 7.1 narrowband rf figures 7.1.1 2-tone v ds = 50 v; i dq = 1.3 a; measured in a common source narrowband 860 mhz test circuit. v ds = 50 v; i dq = 1.3 a; measured in a common source narrowband 860 mhz test circuit. fig 2. 2-tone power gain and drain efficiency as function of load power; typical values fig 3. 2-tone power gain and third order intermodulation distortion as load power; typical values p l(av) (w) 0 500 400 200 300 100 001aao018 d 16 20 24 14 18 22 g p (db) 12 d (%) 20 40 60 10 30 50 0 g p p l(av) (w) 0 500 400 200 300 100 001aao019 16 20 24 14 18 22 g p (db) 12 -40 -20 0 imd3 (dbc) -60 -30 -10 -50 g p imd3
BLF888B_BLF888Bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 17 october 2011 6 of 17 nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor 7.1.2 dvb-t 7.2 broadband rf figures 7.2.1 dvb-t v ds = 50 v; i dq = 1.3 a; measured in a common source narrowband 860 mhz test circuit. v ds = 50 v; i dq = 1.3 a; measured in a common source narrowband 860 mhz test circuit. fig 4. dvb-t power gain and intermodulation distortion shoulder as function of load power; typical values fig 5. dvb-t peak-to-average ratio and drain efficiency as function of load power; typical values p l(av) (w) 0 100 400 200 300 001aao020 16 20 24 g p (db) 12 18 22 14 imd shldr (dbc) -40 -20 0 -60 -30 -10 -50 g p imd shldr p l(av) (w) 0 100 400 200 300 001aao021 4 8 12 par (db) 0 6 10 2 d (%) 20 40 60 0 30 50 10 par d p l(av =120 w; v ds = 50 v; i dq = 1.3 a; measured in a common source broadband test circuit as described in section 8 . p l(av =120 w; v ds = 50 v; i dq = 1.3 a; measured in a common source broadband test circuit as described in section 8 . fig 6. dvb-t power gain and intermodulation distortion shoulder as function of frequency; typical values fig 7. dvb-t peak-to-average ratio and drain efficiency as function of frequency; typical values f (mhz) 400 900 800 600 700 500 001aao022 16 12 20 24 g p (db) imd shldr (dbc) 8 -30 -40 -20 -10 -50 g p imd shldr f (mhz) 400 900 800 600 700 500 001aao023 7.5 6.5 8.5 9.5 par (db) d (%) 5.5 30 20 40 50 10 d par
BLF888B_BLF888Bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 17 october 2011 7 of 17 nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor 7.3 impedance information fig 8. definition of transistor impedance table 8. typical push-pull impedance simulated z i and z l device impedance; impedance info at v ds = 50 v and p l(av) = 120 w (dvb-t). f z i z l mhz ? ? 300 0.617 ? j1.715 4.792 + j0.947 325 0.635 ? j1.355 4.707 + j0.994 350 0.655 ? j1.026 4.619 + j1.035 375 0.677 ? j0.721 4.528 + j1.069 400 0.702 ? j0.435 4.435 + j1.097 425 0.731 ? j0.164 4.340 + j1.118 450 0.762 + j0.096 4.243 + j1.134 475 0.798 + j0.347 4.147 + j1.143 500 0.839 + j0.592 4.049 + j1.146 525 0.884 + j0.833 3.952 + j1.144 550 0.936 + j1.072 3.855 + j1.136 575 0.995 + j1.310 3.759 + j1.123 600 1.063 + j1.549 3.663 + j1.105 625 1.141 + j1.791 3.569 + j1.083 650 1.230 + j2.037 3.477 + j1.055 675 1.334 + j2.289 3.385 + j1.024 700 1.456 + j2.548 3.296 + j0.989 725 1.599 + j2.814 3.209 + j0.949 750 1.768 + j3.090 3.123 + j0.907 775 1.971 + j3.376 3.039 + j0.861 800 2.214 + j3.671 2.958 + j0.812 825 2.510 + j3.975 2.879 + j0.761 850 2.873 + j4.282 2.801 + j0.706 875 3.320 + j4.584 2.726 + j0.650 900 3.875 + j4.865 2.654 + j0.591 925 4.562 + j5.095 2.583 + j0.530 950 5.409 + j5.223 2.514 + j0.467 975 6.426 + j5.166 2.448 + j0.403 1000 7.587 + j4.807 2.384 + j0.337 001aan207 gate 1 gate 2 drain 2 drain 1 z i z l
BLF888B_BLF888Bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 17 october 2011 8 of 17 nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor 7.4 reliability ttf (0.1 % failure fraction). the reliability at pulsed conditions can be calculated as follows: ttf (0.1 %) ? 1 / ? . (1) t j = 100 ? c (2) t j = 110 ? c (3) t j = 120 ? c (4) t j = 130 ? c (5) t j = 140 ? c (6) t j = 150 ? c (7) t j = 160 ? c (8) t j = 170 ? c (9) t j = 180 ? c (10) t j = 190 ? c (11) t j = 200 ? c fig 9. BLF888B; BLF888Bs electromigration (i ds(dc) , total device) 001aao024 years 10 3 10 10 2 10 6 10 5 10 4 10 7 1 i ds(dc) (a) 0 20 16 8 412 2 18 10 614 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11)
BLF888B_BLF888Bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 17 october 2011 9 of 17 nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor 8. test information [1] american technical ceramics type 800r or capacitor of same quality. [2] american technical ceramics type 800b or capacitor of same quality. [3] american technical ceramics type 180r or capacitor of same quality. [4] american technical ceramics type 100a or capacitor of same quality. [5] printed-circuit board (pcb): taconic rf35; ? r = 3.5 f/m; height = 0.762 mm; cu (top/bottom metallization); thickness copper plating = 35 ? m. table 9. list of components for test circuit, see figure 10 , figure 11 and figure 12 . component description value remarks b1, b2 semi rigid coax 25 ? ; 49.5 mm ut-090c-25 (ez 90-25) c1 multilayer ceramic chip capacitor 12 pf [1] c2, c3, c4, c5, c6 multilayer ceramic chip capacitor 8.2 pf [1] c7 multilayer ceramic chip capacitor 6.8 pf [2] c8 multilayer ceramic chip capacitor 2.7 pf [2] c9 multilayer ceramic chip capacitor 2.2 pf [2] c10, c13, c14 multilayer ceramic chip capacitor 100 pf [3] c11, c12 multilayer cera mic chip capacitor 10 pf [2] c15, c16 multilayer cera mic chip capacitor 4.7 ? f, 50 v kemet c1210x475k5rac-tu or capacitor of same quality. c17, c18, c23, c24 multilayer ceramic chip capacitor 100 pf [2] c19, c20 multilayer ceramic chip capacitor 10 ? f, 50 v tdk c570x7r1h106kt000n or capacitor of same quality. c21, c22 electrolytic capacitor 470 ? f; 63 v c30 multilayer ceramic chip capacitor 10 pf [4] c31 multilayer ceramic chip capacitor 9.1 pf [4] c32 multilayer ceramic chip capacitor 3.9 pf [4] c33, c34, c35 multilayer ceramic chip capacitor 100 pf [4] c36, c37 multilayer cera mic chip capacitor 4.7 ? f, 50 v tdk c4532x7r1e475mt020u or capacitor of same quality. l1 microstrip - [5] (w ? l) 15 mm ? 13 mm l2 microstrip - [5] (w ? l) 5 mm ? 26 mm l3, l32 microstrip - [5] (w ? l) 2 mm ? 49.5 mm l4 microstrip - [5] (w ? l) 1.7 mm ? 3.5 mm l5 microstrip - [5] (w ? l) 2 mm ? 9.5 mm l30 microstrip - [5] (w ? l) 5 mm ? 13 mm l31 microstrip - [5] (w ? l) 2 mm ? 11 mm l33 microstrip - [5] (w ? l) 2 mm ? 3mm r1, r2 wire resistor 10 ? r3, r4 smd resistor 5.6 ? 0805 r5, r6 wire resistor 100 ? r7, r8 potentiometer 10 k ?
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx BLF888B_BLF888Bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 17 october 2011 10 of 17 nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor see table 9 for a list of components. fig 10. class-ab common source broadband amplifier; v d1(test) , v d2(test) , v g1(test) and v g2(test) are drain and gate test voltages +v g1(test) +v d1(test) +v d2(test) c32 c31 c30 c19 c20 c15 c10 50 50 l4 c21 c22 c13 c16 c14 c9 c7c6 c4 c8 c5 c3 c2 c1 +v g2(test) l30 l1 l2 r1 l5 l31 c34 c36 c33 c37 l33 c35 l3 b1 r3 l32 b2 r4 r6 r8 r5 r7 c11 c12 c17 r2 c18 c23 c24 001aao025
BLF888B_BLF888Bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 17 october 2011 11 of 17 nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor see table 9 for a list of components. fig 11. printed-circuit board (pcb) for class-ab common source amplifier 50 mm 001aao026 105 mm l33 l32 l32 l31 l30 l30 l1 l5 l5 l1 l2 l2 l3 l3 l4 l31 see table 9 for a list of components. fig 12. component layout for class-ab common source amplifier - + - + 6.3 mm 4 mm +v g2(test) +v d2(test) +v d1(test) +v g1(test) 001aao027 r8 r7 r6 c37 c35 c34 c32 c30 c31 c36 c17 c19 c11 c12 c7 c9 c24 c23 c8 c1 c2 c3 c4 c5 c6 c21 c22 c20 c18 r2 c15 c13 c14 c16 r1 c33 50 c10 50 r4 r3 r5 49.6 mm 36.8 mm 27 mm 24.3 mm 44 mm
BLF888B_BLF888Bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 17 october 2011 12 of 17 nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor 9. package outline fig 13. package outline sot539a references outline version european projection issue date iec jedec eiaj sot539a 10-02-02 00-03-03 0 5 10 mm scale p a f b e d u 2 l h q c 5 12 4 3 d 1 e a w 1 ab m m m q u 1 h 1 c b m m w 2 c e 1 m w 3 unit a mm d b 11.81 11.56 0.18 0.10 31.55 30.94 13.72 9.53 9.27 17.12 16.10 10.29 10.03 4.7 4.2 c e u 2 0.25 0.25 0.51 w 3 35.56 qw 2 w 1 f 1.75 1.50 u 1 41.28 41.02 h 1 25.53 25.27 p 3.30 3.05 q 2.26 2.01 ee 1 9.50 9.30 inches 0.465 0.455 0.007 0.004 1.242 1.218 d 1 31.52 30.96 1.241 1.219 0.540 0.375 0.365 0.674 0.634 0.405 0.395 0.185 0.165 0.010 0.010 0.020 1.400 0.069 0.059 1.625 1.615 1.005 0.995 0.130 0.120 0.089 0.079 0.374 0.366 h 3.48 2.97 0.137 0.117 l dimensions (millimetre dimensions are derived from the original inch dimensions) flanged balanced ldmost ceramic package; 2 mounting holes; 4 leads sot539a note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on m3 screw.
BLF888B_BLF888Bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 17 october 2011 13 of 17 nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor fig 14. package outline sot539b references outline version european projection issue date iec jedec jeita sot539b sot539b_po 10-02-02 11-02-17 unit (1) mm max nom min 4.7 4.2 11.81 11.56 31.55 30.94 31.52 30.96 9.5 9.3 9.53 9.27 1.75 1.50 17.12 16.10 3.48 2.97 10.29 10.03 0.25 a dimensions earless flanged balanced ldmost ceramic package; 4 leads sot539b bc 0.18 0.10 dd 1 ee 1 e 13.72 fhh 1 25.53 25.27 lq 2.26 2.01 u 1 32.77 32.13 u 2 w 2 0.25 mm max nom min 0.185 0.165 0.465 0.455 1.242 1.218 1.241 1.219 0.374 0.366 0.375 0.365 0.069 0.059 0.674 0.634 0.137 0.117 0.405 0.395 0.01 0.007 0.004 0.54 1.005 0.995 0.089 0.079 1.275 1.265 0.01 w 3 0 5 10 mm scale c e q e 1 e h l b h 1 u 1 u 2 d w 2 w 3 1 2 3 4 d d a f d 1 5 note 1. millimeter dimensions are derived from the original inch dimensions.
BLF888B_BLF888Bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 17 october 2011 14 of 17 nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor 10. handling information 11. abbreviations 12. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 10. abbreviations acronym description ccdf complementary cumulative distribution function dvb digital video broadcast dvb-t digital video broadcast - terrestrial ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor ofdm orthogonal frequency division multiplexing par peak-to-average power ratio rf radio frequency smd surface mounted device ttf time-to-failure uhf ultra high frequency vswr voltage standing-wave ratio table 11. revision history document id release date data sheet status change notice supersedes BLF888B_BLF888Bs v.1 2011101 7 product data sheet - -
BLF888B_BLF888Bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 17 october 2011 15 of 17 nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLF888B_BLF888Bs all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 17 october 2011 16 of 17 nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive appl ications beyond nxp semiconductors? standard warranty and nxp semicond uctors? product specifications. 13.4 licenses 13.5 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com ics with dvb-t or dvb-t2 functionality use of this product in any manner that complies with the dvb-t or the dvb-t2 standard may require licenses under applicable patents of the dvb-t respectively the dvb-t2 patent portfolio, which license is available from sisvel s.p.a., via sestriere 100, 10060 none (to), italy, and under applicable patents of other parties.
nxp semiconductors BLF888B; BLF888Bs uhf power ldmos transistor ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 17 october 2011 document identifier: BLF888B_BLF888Bs please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 application information. . . . . . . . . . . . . . . . . . . 5 7.1 narrowband rf figures . . . . . . . . . . . . . . . . . . 5 7.1.1 2-tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1.2 dvb-t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.2 broadband rf figures . . . . . . . . . . . . . . . . . . . 6 7.2.1 dvb-t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.3 impedance information . . . . . . . . . . . . . . . . . . . 7 7.4 reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 10 handling information. . . . . . . . . . . . . . . . . . . . 14 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 15 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 13.4 licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 13.5 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 14 contact information. . . . . . . . . . . . . . . . . . . . . 16 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

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